A system and method are provided for removing quadrature imbalance errors in received data. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. Various manufacturing approaches are also disclosed for manufacturing and assembling a ring for use in a traditional transmission or clutch plate manufacturing and assembly system. A second key kj is also provided on a second garbled gate input wire. In each iteration, a path is selected that has negative slack and replacement values are computed for cell instances in the path.