A susceptor made of a ceramic material for placing and heating an object to be processed, on a placing face thereof in a semiconductor-producing apparatus, includes a surface layer having the placing face, and a supporting layer integrated with the surface layer. The prepped surface can then be coated using the same or substantially similar coating particle. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer.