A method for manufacturing a trench capacitor includes the step of etching a shallow isolation trench in a two-step process flow. The bipolar transistor includes a substrate, a silicon germanium layer formed on the substrate, a collector layer formed on the substrate, a recessed and raised extrinsic base layer formed on the silicon germanium layer, and a silicon pedestal on which an emitter layer is formed. Number of printed copies information corresponding to the number of printed copies of the print job is stored, in association with the print job. The invention also relates to a PoP for applying the system described above, said PoP being executed such, that it can be switch a received signal through to more than one ISP. Correlation of the classified data into sets of correlated data in accordance with correlation rules is performed.