A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes passivating the surface of a semiconductor substrate at a temperature less than approximately 80 C. The substrate containing glass forming raw materials may be formed so as to have a Young’s modulus of 110 or higher. The ejector body includes a longitudinal divider wall that maintains segregation of the materials during transport, and the materials are discharged through separate chute assemblies so as to place the materials in elongate, side-by-side berms.