A semiconductor device and method for arranging and manufacturing the same are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided. The scheduling instructions are executed in priority order. The resin matrix comprises thermoset isophthalic polyester that is about 42% to about 44% by weight or about 60% to about 62% by volume.