Embodiments of the present invention provide a method for epitaxially growing a FinFET. A beam, preferably of one-piece construction, extends from the interior of the housing to the exterior of the housing. All of the modular units of each of the modular unit sets have a ladder-like configuration having at least two generally parallel sidepieces connected by at least four crosspieces except for the modular units of one preselected modular unit set. The first active region and the second active region are adjacent and electrically disconnected with each other.