The invention relates to a gate control device for a JFET-type transistor that has a gate, a drain and a source. The first and second catalysts may be contained in separate reactors or as separate beds in a single reactor. A contact area for contact connection is provided at each end section of a trench capacitor row. Starting from the top level heap, each subsequent level’s heaps are successively examined for determining which particular heap obtains a minimum value until a particular validity bit of the bottom level is reached, which validity bit points to the minimum TS. It is possible to realize traveling of the vehicle with excellent fuel consumption without degrading the overall energy regeneration amount when the vehicle stops.