A process comprising reacting a 2-indenylboranic acid with a bromosubstituted compound in the presence of the Pd catalyst bispalladium dichloride and a base to form the corresponding bridged bis ligand. The first connector is movable relative to the second connector as the support moves relative to the frame, and the first connector is selectively secured to the second connector in different positions, each of the different positions corresponding to a different position of the support relative to the frame. A tunnel oxide layer is formed on the semiconductor substrate. Compensation for the effects of temperature may be included.