Semiconductor-on-insulator structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The resilient end is covered by a protection plate which also covers the electric contact of the piezoelectric blades and is bonded to the piezoelectric blades. The first Ethernet switch receives configuration information associated with the Ethernet tunnel between the first and second Ethernet switches, and processes the configuration information for causing the first Ethernet switch to associate the Ethernet paths of the Ethernet tunnel with an Ethernet tunnel endpoint object associated with an Ethernet tunnel.