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An excessive metallic film on a device isolation region is prevented from contributing to silicidation in an end of a source-drain diffusion layer region to thereby form a silicide film with uniform film thickness. The arms include a foam material, such as a shape memory foam. A determination is made from an analysis of spectral distributions as to whether an image portion is backlit. These polymers can be cast as films for use as: hole transport layers in organic light emitting diodes; active electrochrome in electrochromic windows, mirrors and displays; field effect transistors, supercapacitors, batteries, photovoltaic cells, and other electronic components; electronic paper; anti-stat conductors; and transparent conductors.