A diaphragm pump with a diaphragm of elastic material, which includes a receiving cavity in a reinforced central area for a connecting rod head of a connecting rod which displaces the diaphragm. The invention further relates to a process for preparing the intermediate. Through-holes are respectively formed in a pair of wall portions of the mounting frame which face each other. The TD-LDMOS further includes at least a trench filled with a conductive material and extending vertically from the body region near the top surface downwardly to electrically contact the source electrode disposed on the bottom surface of the semiconductor substrate. The location identification grid can include a second geographic area. In an embodiment of the invention, a method for writing at least one memory cell of an integrated circuit is provided.