A processing method is provided for plasma etching features in a silicon nitride film covered by a mask pattern. The rotation block includes a rotation surface rotatable around a rotation axis, and the fixed block includes a first surface and a second surface opposite to each other and a shaping surface. The graph is repeatedly partitioned into disjoint sub-graphs. The swinging block can be connected to the water separation unit in a sliding manner, and the sliding of the swinging block and of the slide base form a connection, so that the water separation unit can drive the swinging block and drive the slide base to slide with respect to the water separation unit. Further authentication means include hiding messages under one or several different illuminants as well as hiding message with different sets of luminescent inks. Various layers may be affixed onto the sheet of material to provide additional comfort and support to the user.