To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. Further connection lines are provided, via which an electrical connection is produced at least indirectly from the feed line to the respective tapping section associated with a stripline section. The differential circuit includes first and second transistors. The second protection layer is at least disposed on the first protection layer within the peripheral area.