A memory array including memory mats is arranged in a U shape when seen in two dimensions, and a logic circuit and an analog circuit are arranged in a region unoccupied by the memory array. The present invention utilizes Schottky barrier contacts for source andor drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halopocket implants and shallow sourcedrain extensions to control short channel effects. When electrodes are activated, electric current floating is resulted to cause an effect of molecule separation and analysis for the sample in the gel. The outer manifold element is disposed over the inner manifold element and coupled to the module lid, with the inner and outer manifold elements defining a coolant supply manifold, and the outer manifold element and module lid defining a coolant return manifold. The change could include providing rewards, punishments, and stimulation; or changing the materials.