1460429525-c8cea953-faf8-45cd-8611-0b3470d3ffea

According to one embodiment, a one-time programmable device having a lateral diffused metal-oxide-semiconductor structure comprises a pass gate including a pass gate electrode and a pass gate dielectric, and a programming gate including a programming gate electrode and a programming gate dielectric. 3% of Li2O, from 0 to 22% of Na2O, from 0 to 22% of K2O, from 4 to 13% of MgO, from 0 to 6% of TiO2 and from 0 to 5% of ZrO2, provided that the total content of Li2O, Na2O and K2O is from 10 to 22%, and the ratio of the content of Li2O to R2O is at most 0. The identifier is correlated to a subscriber and an alert indicating that the event occurred is generated.