A semiconductor device includes a plurality of MOS transistors, wherein each of the MOS transistors has a drain region, a pair of source regions sandwiching therebetween the drain region, and a pair of normal gates each overlying a space between the drain region and a corresponding one of the source regions. The inventive method consists in first using each transducer i of the first network to emit an approximation of the signal ei. The tinnitus treatment sequence of an externally generated sound wave and then the phase shifted externally generated tone achieve cancellation of the tinnitus tone of the patient as the sequential steps of the generated tone in effect slide across the tinnitus sound wave resulting in cancellation of the tinnitus tone. The trench-type source electrode is in contact with the first source region, the second source region, and the first conduction type semiconductor deposition layer to configure a Schottky junction. The spherical force transfer element is adapted to receive an input force and is configured, upon receipt of the input force, to transfer the input force to the sensor.