The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etchrinse or dryer vessel. The punching mechanism is hydraulically operated and remains stationary while a powered roller advances the tire after each successive punching motion until the beads have completely severed from both sidewalls of the OTR tire. 70% by weight Fe2O3; 0 to 30 ppm of Co3O4; 1 to 20 ppm of Se; and 20 to 200 ppm of CuO. An input terminal is located on one side surface and has a portion extending onto the adjacent side surfaces toward the center portion. The panel further comprises opposite second retaining elements that comprise corresponding hook elements.