A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The second selection phase further includes a round-robin selection process for presently relinquished processors. Further the electric double layer capacitor is high in output voltage, and outputs a large amount of current, has high working ability, has a long-term service life and high reliability, and can be produced at low costs. The rails can be pivoted down to divert patties for clearing jams. Reactive protocols, in turn, collect necessary routing information only if a pair of nodes are to establish a communication. A further increase in protection is offered by monitoring the quantity of moisture of compressed gas andor ambient air, whereby the cleaning device is immediately shut off when predetermined limiting values are exceeded.