An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The new geometries are based in part on mathematical analyses that provide the minimum turn radius for which column performance in not degraded. The high K charge blocking and charge storing medium is disposed on the tunnel medium. Then, the communication apparatus generates and transmits a command of the second protocol to the second device, in accordance with the statuses of the first device obtained before and after the reception of the message. The filler material is disposed above the lower portion of the extruded fire resistant material between the first raised portion and the second portion.