A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited. In an embodiment, the audio device comprises a near-end telephony terminal and the speech signal comprises a speech signal received over a communication network from a far-end telephony terminal for playback at the near-end telephony terminal. The midsole extends up the side of the sole to a vertical height above the vertical height of a lowest point of the inner midsole surface. 5-25 kDa using a volume concentration factor of 2-15 to obtain a retentate and a permeate ; and mixing the UF retentate originating from step with the UF retentate originating from step to obtain a mixture of UF retentates. A processor is also provided for determining a location of the doorway in dependence upon the data relating to the input signal and the image data, and for providing a control signal relating to the determined location of the doorway. The method includes: sending a PPPoE Active Discovery Terminate packet to a BAS from a client computer upon the condition that the client computer has been abnormally disconnected from the broadband access server, sending a responsive PADT packet to the client computer if the client computer is allowed to perform the prompt redial.