A method is provided of forming an assisted charge memory cell. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer underneath the P-well and bordering the N-well. In accordance with the preferences, communications are conducted in one of the following operating modes: conducting the point-to-point call and discontinuing reception of the broadcast, conducting the point-to-point call and continuing reception of the broadcast, aborting completion of the point-to-point call and continuing reception of the broadcast.