In accordance with a particular embodiment of the present invention, a method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. The lower unit package includes a substrate, a semiconductor chip disposed on an upper surface of the substrate, terminal pads arranged on an upper surface of the semiconductor chip, protrusions formed on the terminal pads, a protective layer formed on the substrate and covering the semiconductor chip and the protrusions, and openings formed in the protective layer and exposing the protrusions. The synchronous flash memory device, however, comprises a reset connection, and a Vccp power supply connection correspond to first and second no-connect interconnect pins of the synchronous dynamic random access memory. The free-floating transducer housing may in at least one position be freely moveably disposed relative to the inner housing.