A resistive switching memory device and a method for operating the same are disclosed. For example, in response to an engine shutdown command, the OBC might cause a fault-spoofing engine shutdown device in one embodiment to spoof an engine overheating condition by inserting an electrical resistance in parallel with the resistance of an engine temperature sensor, thus lowering the electrical resistance of the temperature sensor as detected by the ECM. In addition, the memory element is made more robust with respect to a high electrical voltage used for recording the binary value. Further disclosed is substantially pure 1-hexadecyl-2-butyl-sn-glycero-3-phosphocholine.