A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HFH2O. The group of additional layers may include first and second contact layer configured for electrical communication with the photosensitive layer. The control panel also includes a pressure switch for locking each jack in place, and each jack has an associated leak detection sensor that communicates with the control panel switch associated with that jack so that detection of a leak will cause the control panel switch for that jack to blink on and off thereby alerting the individual of a dangerous condition. At this point in time, the aluminum metal undergoes substantially uniform cracking in a direction orthogonal to a drawing direction. The system includes a tester having a power supply, an integrated circuit device under test and a transient compressor coupled between the tester and the power supply to stabilize power delivered to the DUT by injecting current into the path between the power supply and the DUT. The bridge structures at least partially, and preferably fully, span the gap between two wafers, and, more specifically, between a through-hole via in one wafer and a corresponding component on the other wafer.