A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250\xb0 C. The method and apparatus utilize a plurality of non-orthogonal halftone screens to produce outputs that are moir\xe9 free and form uniform periodic rosettes. When receiving the response signal from the transmitter, a receiver stores the ID code contained in the response signal in the memory if the channel code contained in the response signal is related to a channel code set by a channel code setting switch. Communications are allowed by the configuration of a closed loop circuit comprising the control cable, the branch line, the capacitor, a primary coil of the coupling transformer, the capacitor, the branch line, the grounded cable, the capacitor, and a primary coil of the coupling transformer. The computer device is coupled with a connector cable of the connector, and is wirelessly coupled with probe.