A method for forming a lightly doped drain field effect transistor uses very thin first sidewall spacers over the gate sidewalls, in which annealingoxidation of the sidewall spacers results in the rounding of corner portions of the gate structure sidewalls adjacent the gate oxide, and a very low thermal consumption comprising a small portion of the total thermal budget. The thinned layer is formed from an electrically insulating material but is configured such that the layer provides no significant electrical resistance to current passing through the layer. Flexible retaining fingers extend into each individual compartment and secure the hemostatic clip to a pedestal. The microcomputer corrects the video signals according to the correction amount before the DA conversion, and the image signal processing circuit outputs the corrected video signals to a displaying device controlling circuit, and a displaying device displays an image. Other embodiments analyze sequence data to enhance content identification andor to establish channel identification. Accordingly, the etching can be performed in step-by-step manner, whereby enabling the control of the etching amount at high precision.