A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The present disclosure relates the use of focused light to acquire photoacoustic measurements. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns. Other embodiments may be described and claimed. In addition, conductive vias are also formed to electrically connect the conductive vias of the second conductive plane to their corresponding redistributed bond pads in the first conductive plane. Also provided are bits incorporating such cutting elements.