A method for fabricating a transistor on a semiconductor substrate includes varying a polysilicon doping level near a first and second edge of a diffusion region with a polysilicon doping level of a center region of a polysilicon region. The system also includes an inert purge gas supply adapted to supply a purge gas to the sterilizer chamber after the sterilant gas mixture is withdrawn to the storage recovery tank, wherein the gas recovery assembly evacuates an additional portion of the purge gas from the sterilizer chamber to the storage tank to enrich the gas mixture for later reutilization in subsequent sterilization cycles. The energy-absorbing ribs are formed in a non-aligned direction to the longitudinal axis, that is, at some non-zero angle to the axis. When the movable lid is closed, terminals of the flexible circuit board are partially exposed in the terminal grooves at the movable lid, thereby effectively reducing thickness of the flexible circuit board connector for forming an ultra-thin flexible circuit board connector. The method of depositing a precursor solution at a substrate to form a coating comprises maintaining a substrate at a pre-selected temperature, delivering the precursor solution from a reservoir bank, atomizing the precursor solution, injecting the atomized precursor solution into a flame, and directing the flame to the substrate. In addition methods of designing new esterase method of use thereof are also provided.