A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output. The material has particular applicable to environments where such contamination would create problems, such as food processing and preparation environments, computer operations, electronic component manufacturing and other environments. The processor stops HLE transactional execution at the point of failure in the code region.