A high integration phase change memory device includes a semiconductor substrate including an access device, a heating electrode formed on the access device, a phase change nano band formed on the heating electrode, and an interlayer insulating layer for supporting the phase change nano band formed in both sides of the phase change nano band. The wafer has a first layer and a second layer. The cap is rotatable to a first position such that rotation of the threaded cable in a first direction causes the threaded cable to translate along its longitudinal axis in a first direction. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength.