By forming two or more individual dielectric layers of high intrinsic stress levels with intermediate interlayer dielectric material, the limitations of respective deposition techniques, such as plasma enhanced chemical vapor deposition, may be respected while nevertheless providing an increased amount of stressed material above a transistor element, even for highly scaled semiconductor devices. Each of the multiple function punch assemblies includes an inner or a center punch and an outer or ring-shaped punch surrounding and in sliding contact with the inner punch. A first conduit has an interior positioned to pass the wire along the path and is mounted for rotation. The method further includes determining proximity of the first device and the second device based on the determined strength of the one or more signals. The third embodiment of the present invention combines the Q-switched laser and a laser-wavelength converter to form a Q-switched wavelength-conversion laser, wherein the EO Bragg deflector can be monolithically integrated with a quasi-phase-matching wavelength converter in a fabrication process.