A method of forming a conductive metal line over a semiconductor wafer including forming a diffusion barrier layer over a top surface of the semiconductor wafer, and forming a seed metal layer over the diffusion barrier layer. Step floors are configured of forward inclined parts disposed ahead of the floors in a forward rising shape, horizontal parts disposed either substantially horizontally or in a rearwardly rising shape behind these forward inclined parts, and bent parts connecting the forward inclined parts and the horizontal parts. 0 gm2\xb724 hr or less, and a portion covering the color conversion filter layer with a thickness tPL expressed by the following equation,0<tPL<0.