A metal sourcedrain field effect transistor is fabricated such that the sourcedrain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. The inter-pixel filter includes filters having different filtering strengths. The device includes a platform defining a fore-aft plane. Particularly, a coefficient of the variation of the Ip2, gain, in said function is corrected responsive to the oxygen concentration in the measurement gas. The repositioned portion is attached to the second surface of the printed circuit board. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, and forms thereof are active on at least one Raf protein kinase.