A merged structure SRAM cell is provided that includes a first transistor and a second transistor. The upper layer comprises a well region of a second, opposite conduction type adjacent an edge termination zone that comprises a layer of a material having a higher critical electric field than silicon. The method also includes supplying a compound containing chlorine into the reaction tank. Then, the top surfaces of the first and second polysilicon films are polished, thereby to form a memory gate electrode formed of the second polysilicon film at the sidewall of a control gate electrode formed of the first polysilicon film via the ONO film. The receiver transmits power from the switch. The port names are used to generate interface_ids of the ports corresponding to the physical slots in which the ports are located.