The present invention provides a power transistor device including a substrate, an epitaxial layer, a dopant source layer, a doped drain region, a first insulating layer, a gate structure, a second insulating layer, a doped source region, and a metal layer. The wireless transceiver is located within the enterprise and receives a hand-off for a wireless communication device from a public network base station in response to the wireless communication device entering an enterprise cell. Any appropriate mixing, forming, andor thermal processing methods and equipment may be used. The second functional plan is generated by a processing unit, by way of the rule base and the first functional plan.