The present invention discloses a method for manufacturing semiconductor device wherein a channel implant process of a transistor in a DRAM is performed in a self-aligned manner without using any mask. Step support frame is provided laterally outwardly of the lower frame, for supporting thereon a boarding step so that the floor section is located at a level higher than the boarding step. An adjustable valve portion fluidly communicates the upper working chamber with a reserve chamber. The post has suitable openings so that cabling can pass from interiorly of one panel through the post for passage into the interior of another panel. Other embodiments may be described andor claimed. A stator coil is wound on each of the tees by a distributed or concentrated winding method.