Approaches for providing a fin field effect transistor device with a planar block area to enable variable fin pitch and width are disclosed. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface. The assignment of virtual network interfaces to particular receive rings of the network interface cards may be determined, for example, dynamically, based on priorities associated with particular virtual network interfaces, based on function type, andor based on service need.