A circuit protection device includes a plasma gun, at least one capacitor communicatively coupled to the plasma gun, and a monitoring circuit communicatively coupled to the at least one capacitor. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. The array support portion secures and vertically moves an array of elongate flimsy members to be lowered into an array of inlets of the coating portion, the inlets aligned in an array.