A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. Electrifiers uniformly electrify surfaces of the photoconductors. In addition, to further improve the method of independent cycle operation, regenerative feedwater heating is proposed to be added to the solar Rankine cycle and to simplify the independent operation of the two cycles. The first floating gate includes silicon. In an alternative arrangement, four moveable arms are linked in diametrically opposite pairs to move between a release position and a clamping position.