A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. These mirrors are located at a position beyond a normal scan range of the laser light in the Z-axis direction and within a limit range of scanning of the laser light, and the angles of inclination of mirrors are adjusted so as to reflect incident laser light toward a PD. A transmission member is movably supported on the movable frame without any connection utilizing an elongated slot. In the nitride film forming step, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.