One time programmable memory devices are disclosed that are programmed using hot carrier induced degradation to alter one or more transistors characteristics. A switch and a plurality of pins are arranged on the base, and a plurality of sockets is defined in the base corresponding to the pins. The system further includes an unclocked flip-flop configured to generate a first output signal. In a similar manner a second layer of device material is formed in a pattern overlying the first device layer with portions of the two layers joined together leaving a portion of the release layer between them.