In a semiconductor device and a method of fabricating the same, a vertical channel transistor has a cell occupation area of 4F2. The method and system include collecting set of digital training images including a set of states for the set of digital training images. In certain embodiments of the invention, a micelle-metal ion complex is formed and deposited on a surface. The tray may then be moved again in a horizontal direction. The perforating element may be at least one hard plastic or metal spike. The system is configured for automated assembly of the scaffold and catheter prior to crimping and performing post-crimping inspection for the crimped scaffold and prior to placing a restraining sheath over the crimped scaffold.