A semiconductor memory device according to an embodiment comprises a memory cell array configured from a plurality of row lines and column lines that intersect one another, and from a plurality of memory cells disposed at each of intersections of the row lines and column lines and each including a variable resistance element. The method includes receiving input from a provider regarding a recommender of candidates and from a candidate regarding a recommendation for that candidate by the recommender. The nitrile hydrolysis reactor product stream is continuously introduced into an amide hydrolysis flow reactor. If so, upon loading the cache line into the cache, the system marks the cache line as containing only scratch data, which allows the cache line to be evicted next from the cache. Such failsafe indication is required before personnel are allowed near the antenna. Non-PLP signaling information is included in a data PLP for a particular broadcast service and the data PLP is transmitted through a current frame, when no data PLP for the particular broadcast service is transmitted in at least one frame to be transmitted within a maximum schedulable period NMAX from a time the current frame is transmitted.