Techniques are disclosed for forming a non-planar quantum well structure. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage orand an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. Each of the filars is a conductor having a plurality of substantially straight segments disposed in the core slots. The source of the p-type depletion transistor is coupled to VDD. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. The method includes disposing the substrate in a batch processing system configured for performing ALD of the silicon-containing film, exposing the substrate to a non-saturating amount of a first precursor containing silicon, and evacuating or purging the first precursor from the batch processing system.