A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial material that is deposited over a structure layer and covered by a cover layer. The said gate latch catcher assembly is a flat bar segment composed of three right angled bends designed similar to open fingers, to catch the oncoming protruded gate edge post. One receptacle forms a caliper back and the other receptacle forms a housing having a lever dome formed thereon. After the ions have been stored, a single-phase RF voltage is supplied to all rods of a middle segment thus forming a three-dimensional ion trap, thereby collecting the ions in a spherical cloud within this middle segment.