An integrated circuit includes a process voltage temperature effect transducer responsive to a PVT effect, a PVT effect quantifier coupled to the PVT effect transducer and configured to quantify the PVT effect to provide an output, and a bias controller configured to receive the output of the PVT effect quantifier and provide a bias voltage for a substrate of an NMOS or a PMOS transistor. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. An error amplifier outputs an error voltage such that an output voltage of the step-down converter approaches the predetermined reference voltage. The switching valve is provided in an air supply route which reaches the supplying actuator. Other embodiments are disclosed.