A method comprising characterizing the dimensions of structures on a semiconductor device having dimensions less than approximately 100 nanometers using one of scanning probe microscopy or profilometry. A well region is disposed in a portion of the semiconductor layer, and a plurality of first doped regions is disposed in various portions of the well region. A snub idler may be engaged with the return portion of the belt so that the belt properly engages the drive sprocket. A wiper drive motor pivots the wiper arm between an out-wipe position and an in-wipe position. In some implementations, an injection treatment may be designed for a subterranean formation based on the predicted response of the rock blocks.