A process of forming a CMOS integrated circuit including integrating SiGe sourcedrains in the PMOS transistor after sourcedrain and LDD implants and anneals. A flexible material is attached to the cords. Stent embodiments may include tapered struts for an even distribution of strain. The primary guide rail and each secondary guide rail are engaged to the guide screw and connected to the fixing base. A radiation apparatus including the image acquisition device is also provided. Then, a substrate 40 which has a protruding surface 13 having the same area as that of the first region 17 and formed on a main surface 18 of the substrate 40 having a larger area than that of the first region 17 is disposed so that the protruding surface 13 faces the first region 17 of the wiring board 31.