A memory device has a sidewall insulating member with a sidewall insulating member length according to a first spacer layer thickness. The device includes a processor operable to process a header portion of data without processing a payload. One wall of the channel is typically movable to disengage from the wedge member when the gripping force is to be removed. The coupling element may be a conductive element configured for predetermined EM inductive coupling with at least the antenna and the one or more dissipating elements. By exerting a coulomb force between both the portions, the test of the sensor is carried out.