The high-power pack semiconductor module comprises a layer, which is brought into direct contact with one or both of the main electrodes of the Si semiconductor chip,, said layer being made of a metal matrix composite material whose coefficient of thermal expansion can be tailored to a value either close or matching that of Si. The single leash couples to the harness via a first swiveling connection. The first terminal of each pair of terminals is grounded, and the second terminal of each pair of terminals is connected to a variable resistance component connectable to a voltage source. During manufacture, the edge band is placed on the fabric layer, sonic energy is applied so that the fabric layer and the edge band are simultaneously trimmed along a cut edge and welded to one another along the cut edge, and an adhesive between the fabric layer and the edge band is activated to adhere the edge band to the fabric layer.